STB30N65M5
Quantity available
8 164
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ready to ship
Location
Austria
Brand
STMicroelectronics
Mpn
STB30N65M5
Datasheet
Description
N-channel 650 V, 0.125 Ohm typ., 22 A MDmesh M5 Power MOSFET in D2PAK package
Technical specification: STB30N65M5
RoHS
Compliant
Lead Free
Lead Free
Radiation Hardening
No
Fall Time
10 ns
Packaging
Digi-Reel®
Rise Time
8 ns
Rds On Max
139 mΩ
Resistance
139 MΩ
Input Capacitance
2.88 nF
Power Dissipation
140 W
Number of Elements
1
Turn-On Delay Time
50 ns
Turn-Off Delay Time
50 ns
Element Configuration
Single
Max Power Dissipation
140 W
Max Operating Temperature
150 °C
Min Operating Temperature
-55 °C
Drain to Source Resistance
125 mΩ
Gate to Source Voltage (Vgs)
25 V
Continuous Drain Current (ID)
22 A
Drain to Source Voltage (Vdss)
650 V
Drain to Source Breakdown Voltage
650 V
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