Si7852ADP-T1-GE3
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138
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Standort
US
Marke
Vishay
Mpn
Si7852ADP-T1-GE3
Beschreibung
MOSFET N-CH 80V 30A PPAK SO-8
Technische Daten: Si7852ADP-T1-GE3
China RoHS
Compliant
Lead Free
Lead Free
Radiation Hardening
No
REACH SVHC
Yes
RoHS
Compliant
Height
1.12 mm
Length
4.9 mm
Width
5.89 mm
Case/Package
SOIC
Mount
Surface Mount
Number of Pins
8
Number of Terminals
5
Weight
506.605978 mg
Export Control Classification Number (ECCN) Code
EAR99
Introduction Date
2009-02-19
Lifecycle Status
Obsolete (Last Updated: 6 months ago)
LTB Date
2025-02-13
LTD Date
2025-08-13
Continuous Drain Current (ID)
12 A
Drain to Source Breakdown Voltage
80 V
Drain to Source Resistance
17 mΩ
Drain to Source Voltage (Vdss)
80 V
Element Configuration
Single
Fall Time
9 ns
Gate to Source Voltage (Vgs)
20 V
Input Capacitance
1.825 nF
Max Junction Temperature (Tj)
150 °C
Max Operating Temperature
150 °C
Max Power Dissipation
62.5 W
Manufacturer Package Identifier
S17-0173_SINGLE
Min Breakdown Voltage
80 V
Min Operating Temperature
-55 °C
Number of Channels
1
Number of Elements
1
Power Dissipation
5 W
Rds On Max
17 mΩ
Resistance
17 MΩ
Rise Time
9 ns
Threshold Voltage
4.5 V
Turn-Off Delay Time
26 ns
Turn-On Delay Time
16 ns
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