SMBJ3V3-E3/52
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Vishay
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SMBJ3V3-E3/52
Beschreibung
TVS DIODE 3.3VWM 10.3V DO214AA
Technische Daten: SMBJ3V3-E3/52
China RoHS
Non-Compliant
Lead Free
Lead Free
Radiation Hardening
No
REACH SVHC
No
RoHS
Compliant
Height
2.44 mm
Length
4.5466 mm
Width
3.937 mm
Contact Plating
Tin
Mount
Surface Mount
Number of Pins
2
Number of Terminals
2
Weight
96 mg
Country of Origin
Mainland China
Export Control Classification Number (ECCN) Code
EAR99
Harmonized Tariff Schedule (HTS) Code
8541.10.00.50
Introduction Date
2006-03-16
Lifecycle Status
Production (Last Updated: 2 months ago)
Breakdown Voltage
4.1 V
Capacitance
5.2 nF
Clamping Voltage
7.3 V
Direction
Unidirectional
Element Configuration
Single
ESD Protection
No
Leakage Current
200 µA
Max Breakdown Voltage
4.1 V
Max Junction Temperature (Tj)
175 °C
Max Operating Temperature
175 °C
Max Power Dissipation
5 W
Max Reverse Leakage Current
200 µA
Max Surge Current
3.3 A
Min Breakdown Voltage
4.1 V
Min Operating Temperature
-65 °C
Number of Channels
1
Number of Elements
1
Packaging
Cut Tape
Peak Pulse Current
200 A
Peak Pulse Power
600 W
Peak Reverse Current
200 µA
Polarity
Unidirectional
Power Dissipation
600 W
Power Rating
600 W
Reverse Breakdown Voltage
4.1 V
Reverse Standoff Voltage
3.3 V
Termination
SMD/SMT, Solder
Test Current
1 mA
Voltage Rating (DC)
3.3 V
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