SMBJ3V3-E3/52
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4 175
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Vishay
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SMBJ3V3-E3/52
Beschreibung
TVS DIODE 3.3VWM 10.3V DO214AA
Technische Daten: SMBJ3V3-E3/52
Radiation Hardening
No
China RoHS
Non-Compliant
REACH SVHC
No
RoHS
Compliant
Lead Free
Lead Free
Width
3.937 mm
Height
2.44 mm
Length
4.5466 mm
Mount
Surface Mount
Weight
96 mg
Contact Plating
Tin
Number of Pins
2
Number of Terminals
2
Introduction Date
2006-03-16
Lifecycle Status
Production (Last Updated: 2 months ago)
Country of Origin
Mainland China
Export Control Classification Number (ECCN) Code
EAR99
Harmonized Tariff Schedule (HTS) Code
8541.10.00.50
Max Breakdown Voltage
4.1 V
Max Junction Temperature (Tj)
175 °C
Max Surge Current
3.3 A
Min Operating Temperature
-65 °C
Power Rating
600 W
Reverse Standoff Voltage
3.3 V
Termination
SMD/SMT, Solder
Voltage Rating (DC)
3.3 V
Capacitance
5.2 nF
Clamping Voltage
7.3 V
ESD Protection
No
Breakdown Voltage
4.1 V
Peak Pulse Power
600 W
Peak Reverse Current
200 µA
Polarity
Unidirectional
Power Dissipation
600 W
Test Current
1 mA
Element Configuration
Single
Leakage Current
200 µA
Max Operating Temperature
175 °C
Max Power Dissipation
5 W
Min Breakdown Voltage
4.1 V
Number of Elements
1
Max Reverse Leakage Current
200 µA
Number of Channels
1
Packaging
Cut Tape
Peak Pulse Current
200 A
Reverse Breakdown Voltage
4.1 V
Direction
Unidirectional
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