SMBJ3V3-E3/52
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Vishay
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SMBJ3V3-E3/52
Beschreibung
TVS DIODE 3.3VWM 10.3V DO214AA
Technische Daten: SMBJ3V3-E3/52
Radiation Hardening
No
REACH SVHC
No
RoHS
Compliant
China RoHS
Non-Compliant
Lead Free
Lead Free
Width
3.937 mm
Height
2.44 mm
Length
4.5466 mm
Mount
Surface Mount
Number of Pins
2
Number of Terminals
2
Weight
96 mg
Contact Plating
Tin
Lifecycle Status
Production (Last Updated: 2 months ago)
Country of Origin
Mainland China
Export Control Classification Number (ECCN) Code
EAR99
Harmonized Tariff Schedule (HTS) Code
8541.10.00.50
Introduction Date
2006-03-16
Breakdown Voltage
4.1 V
Max Breakdown Voltage
4.1 V
Max Junction Temperature (Tj)
175 °C
Max Operating Temperature
175 °C
Max Power Dissipation
5 W
Max Reverse Leakage Current
200 µA
Max Surge Current
3.3 A
Min Breakdown Voltage
4.1 V
Min Operating Temperature
-65 °C
Number of Channels
1
Number of Elements
1
Packaging
Cut Tape
Peak Pulse Current
200 A
Peak Pulse Power
600 W
Peak Reverse Current
200 µA
Polarity
Unidirectional
Power Dissipation
600 W
Power Rating
600 W
Reverse Breakdown Voltage
4.1 V
Reverse Standoff Voltage
3.3 V
Termination
SMD/SMT, Solder
Test Current
1 mA
Voltage Rating (DC)
3.3 V
Capacitance
5.2 nF
Clamping Voltage
7.3 V
Direction
Unidirectional
Element Configuration
Single
ESD Protection
No
Leakage Current
200 µA
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