SIR870ADP-T1-GE3
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6 000
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AT
Marke
Vishay
Mpn
SIR870ADP-T1-GE3
Datenblatt
Beschreibung
Vishay N channel TrenchFET power MOSFET, 100 V, 60 A, SOIC-8, SIR870ADP-T1-GE3
Technische Daten: SIR870ADP-T1-GE3
Lead Free
Lead Free
Radiation Hardening
No
REACH SVHC
No
RoHS
Compliant
Height
1.12 mm
Length
6.25 mm
Width
5.26 mm
Contact Plating
Tin
Mount
Surface Mount
Number of Pins
8
Number of Terminals
5
Weight
506.605978 mg
Country of Origin
Mainland China
Export Control Classification Number (ECCN) Code
EAR99
Introduction Date
2012-02-27
Lifecycle Status
NRND (Last Updated: 1 month ago)
Continuous Drain Current (ID)
60 A
Drain to Source Breakdown Voltage
100 V
Drain to Source Resistance
7 mΩ
Drain to Source Voltage (Vdss)
100 V
Element Configuration
Single
Fall Time
9 ns
Gate to Source Voltage (Vgs)
20 V
Input Capacitance
2.866 nF
Max Junction Temperature (Tj)
150 °C
Max Operating Temperature
150 °C
Max Power Dissipation
104 W
Min Breakdown Voltage
100 V
Min Operating Temperature
-55 °C
Number of Channels
1
Number of Elements
1
Power Dissipation
104 W
Rds On Max
6.6 mΩ
Rise Time
15 ns
Threshold Voltage
3 V
Turn-Off Delay Time
35 ns
Turn-On Delay Time
13 ns
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