SI7414DN-T1-E3
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Vishay
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SI7414DN-T1-E3
Beschreibung
MOSFET N-CH 60V 5.6A PPAK1212-8
Technische Daten: SI7414DN-T1-E3
China RoHS
Compliant
Lead Free
Lead Free
Radiation Hardening
No
REACH SVHC
Unaffected
RoHS
Compliant
Height
1.12 mm
Length
3.05 mm
Width
3.05 mm
Mount
Surface Mount
Number of Pins
8
Number of Terminals
5
Country of Origin
Israel
Export Control Classification Number (ECCN) Code
EAR99
Introduction Date
2005-09-13
Lifecycle Status
Obsolete (Last Updated: 8 months ago)
LTB Date
2024-12-21
LTD Date
2025-06-21
Continuous Drain Current (ID)
5.6 A
Drain to Source Breakdown Voltage
60 V
Drain to Source Resistance
25 mΩ
Drain to Source Voltage (Vdss)
60 V
Element Configuration
Single
Fall Time
12 ns
Gate to Source Voltage (Vgs)
20 V
Max Junction Temperature (Tj)
150 °C
Max Operating Temperature
150 °C
Max Power Dissipation
1.5 W
Manufacturer Package Identifier
SI7414DN-T1-E3
Min Breakdown Voltage
60 V
Min Operating Temperature
-55 °C
Nominal Vgs
3 V
Number of Channels
1
Number of Elements
1
Power Dissipation
1.5 W
Rds On Max
25 mΩ
Resistance
25 mΩ
Rise Time
12 ns
Threshold Voltage
3 V
Turn-Off Delay Time
30 ns
Turn-On Delay Time
15 ns
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