STD12NF06LT4

STD12NF06LT4
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774
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Standort
AT
Marke
STMicroelectronics
Mpn
STD12NF06LT4
Beschreibung
MOSFETs N-Ch 60 Volt 12 Amp

Technische Daten: STD12NF06LT4

China RoHS
Non-Compliant
Lead Free
Lead Free
Radiation Hardening
No
REACH SVHC
No
RoHS
Compliant
Height
2.4 mm
Length
6.6 mm
Width
6.2 mm
Case/Package
DPAK
Contact Plating
Tin
Mount
Surface Mount
Number of Pins
3
Number of Terminals
2
Weight
4.535924 g
Export Control Classification Number (ECCN) Code
EAR99
Introduction Date
1980-01-04
Lifecycle Status
Production (Last Updated: 1 month ago)
Continuous Drain Current (ID)
12 A
Current Rating
12 A
Drain to Source Breakdown Voltage
60 V
Drain to Source Resistance
120 mΩ
Drain to Source Voltage (Vdss)
60 V
Dual Supply Voltage
60 V
Element Configuration
Single
Fall Time
13 ns
Gate to Source Voltage (Vgs)
16 V
Input Capacitance
350 pF
Max Operating Temperature
175 °C
Max Power Dissipation
30 W
Min Breakdown Voltage
60 V
Min Operating Temperature
-55 °C
Nominal Vgs
2 V
Number of Elements
1
Packaging
Tape and Reel
Power Dissipation
30 W
Rds On Max
100 mΩ
Resistance
100 mΩ
Rise Time
35 ns
Termination
SMD/SMT
Threshold Voltage
3 V
Turn-Off Delay Time
20 ns
Turn-On Delay Time
10 ns
Voltage Rating (DC)
60 V
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