STB10N60M2
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STMicroelectronics
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STB10N60M2
Datenblatt
Beschreibung
N-channel 600 V, 0.55 Ohm typ., 7.5 A MDmesh M2 Power MOSFET in D2PAK package
Technische Daten: STB10N60M2
China RoHS
Non-Compliant
Lead Free
Lead Free
REACH SVHC
No
RoHS
Compliant
Height
4.6 mm
Length
10.4 mm
Width
9.35 mm
Case/Package
D2PAK
Mount
Surface Mount
Number of Pins
3
Number of Terminals
2
Weight
3.949996 g
Country of Origin
Mainland China
Export Control Classification Number (ECCN) Code
EAR99
Introduction Date
2013-12-09
Lifecycle Status
Production (Last Updated: 6 months ago)
Continuous Drain Current (ID)
7.5 A
Drain to Source Breakdown Voltage
650 V
Drain to Source Resistance
600 mΩ
Drain to Source Voltage (Vdss)
600 V
Element Configuration
Single
Fall Time
13.2 ns
Gate to Source Voltage (Vgs)
25 V
Input Capacitance
400 pF
Max Operating Temperature
150 °C
Max Power Dissipation
85 W
Min Breakdown Voltage
600 V
Min Operating Temperature
-55 °C
Number of Channels
1
Number of Elements
1
Packaging
Tape and Reel
Power Dissipation
85 W
Rds On Max
600 mΩ
Rise Time
8 ns
Turn-Off Delay Time
32.5 ns
Turn-On Delay Time
8.8 ns
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