2N2222A
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STMicroelectronics
Mpn
2N2222A
Datenblatt
Beschreibung
Bulk Through Hole Switch Single Bipolar (BJT) Transistor 100 @ 150mA 10V 10nA ICBO 500mW 300MHz
Technische Daten: 2N2222A
China RoHS
Compliant
Radiation Hardening
No
REACH SVHC
Yes
RoHS
Compliant
Height
5.3 mm
Length
5.8 mm
Width
5.8 mm
Body Material
Metal
Case/Package
TO-18
Mount
Through Hole
Number of Pins
3
Number of Terminals
3
Export Control Classification Number (ECCN) Code
EAR99
Harmonized Tariff Schedule (HTS) Code
8541.29.00.75
Introduction Date
1980-01-06
Lifecycle Status
Obsolete (Last Updated: 6 months ago)
LTB Date
2013-12-17
LTD Date
2014-06-17
Collector Base Voltage (VCBO)
75 V
Collector Emitter Breakdown Voltage
40 V
Collector Emitter Saturation Voltage
1 V
Collector Emitter Voltage (VCEO)
40 V
Current Rating
600 mA
Element Configuration
Single
Emitter Base Voltage (VEBO)
6 V
Frequency
300 MHz
Gain Bandwidth Product
300 MHz
hFE Min
40
Max Collector Current
600 mA
Max Frequency
300 MHz
Max Operating Temperature
175 °C
Max Power Dissipation
500 mW
Min Operating Temperature
-65 °C
Number of Elements
1
Packaging
Bulk
Polarity
NPN
Power Dissipation
1.8 W
Transition Frequency
300 MHz
Type
Switch
Voltage Rating (DC)
75 V
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