SI7456DP-T1-E3
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215
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Standort
US
Marke
SIL
Mpn
SI7456DP-T1-E3
Technische Daten: SI7456DP-T1-E3
China RoHS
Compliant
REACH SVHC
Yes
RoHS
Compliant
Lead Free
Lead Free
Radiation Hardening
No
Width
5.89 mm
Length
4.9 mm
Height
1.17 mm
Number of Pins
8
Number of Terminals
8
Weight
506.605978 mg
Contact Plating
Tin
Mount
Surface Mount
Introduction Date
2003-08-13
LTD Date
2025-06-21
Export Control Classification Number (ECCN) Code
EAR99
LTB Date
2024-12-21
Harmonized Tariff Schedule (HTS) Code
8541.29.00.95
Lifecycle Status
Obsolete (Last Updated: 6 months ago)
Element Configuration
Single
Gate to Source Voltage (Vgs)
20 V
Max Operating Temperature
150 °C
Manufacturer Package Identifier
S17-0173-Single
Min Operating Temperature
-55 °C
Nominal Vgs
2 V
Number of Elements
1
Continuous Drain Current (ID)
5.7 A
Drain to Source Resistance
25 mΩ
Drain to Source Voltage (Vdss)
100 V
Max Power Dissipation
1.9 W
Rds On Max
25 mΩ
Threshold Voltage
2 V
Drain to Source Breakdown Voltage
100 V
Fall Time
10 ns
Power Dissipation
1.9 W
Resistance
25 mΩ
Rise Time
10 ns
Turn-On Delay Time
20 ns
Max Junction Temperature (Tj)
150 °C
Min Breakdown Voltage
100 V
Number of Channels
1
Turn-Off Delay Time
46 ns
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