PDTB123YT,215
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Mpn
PDTB123YT,215
Datenblatt
Beschreibung
PDTB123YT - 50 V, 500 mA PNP resistor-equipped transistor; R1 = 2.2 kΩ, R2 = 10 kΩ
Technische Daten: PDTB123YT,215
China RoHS
Compliant
Lead Free
Lead Free
Radiation Hardening
No
Ratings
AEC-Q101
REACH SVHC
Yes
RoHS
Compliant
Height
1 mm
Length
3 mm
Width
1.4 mm
Case/Package
TO-236-3
Contact Plating
Tin
Mount
Surface Mount
Number of Pins
3
Number of Terminals
3
Weight
4.535924 g
Country of Origin
Mainland China, Malaysia
Export Control Classification Number (ECCN) Code
EAR99
Introduction Date
2005-04-28
Lifecycle Status
Production (Last Updated: 2 years ago)
Manufacturer Lifecycle Status
RELEASED FOR SUPPLY (Last Updated: 2 years ago)
Collector Emitter Breakdown Voltage
50 V
Collector Emitter Saturation Voltage
300 µV
Collector Emitter Voltage (VCEO)
50 V
Element Configuration
Single
Emitter Base Voltage (VEBO)
-5 V
hFE Min
70
Max Breakdown Voltage
50 V
Max Collector Current
500 mA
Max Operating Temperature
150 °C
Max Output Current
100 mA
Max Power Dissipation
250 mW
Min Operating Temperature
-65 °C
Number of Elements
1
Operating Supply Voltage
50 V
Polarity
PNP
Power Dissipation
250 mW
Termination
SMD/SMT
Test Current
2 mA
Zener Voltage
43 V
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