BSH203,215
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5 206
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fertig zum Versand
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BSH203,215
Datenblatt
Beschreibung
BSH203 Sereies 30 V 1.65 Ohm 2.2 nC 417 mW P-Channel Silicon SMT MOSFET - SOT-23
Technische Daten: BSH203,215
China RoHS
Compliant
Lead Free
Lead Free
Radiation Hardening
No
REACH SVHC
Yes
RoHS
Compliant
Height
1 mm
Length
3 mm
Width
1.4 mm
Case/Package
SOT
Contact Plating
Tin
Number of Pins
3
Number of Terminals
3
Country of Origin
Mainland China
Export Control Classification Number (ECCN) Code
EAR99
Harmonized Tariff Schedule (HTS) Code
8541.21.00.95
Introduction Date
1998-08-01
Lifecycle Status
Production (Last Updated: 2 years ago)
Manufacturer Lifecycle Status
RELEASED FOR SUPPLY (Last Updated: 2 years ago)
Continuous Drain Current (ID)
470 mA
Drain to Source Breakdown Voltage
30 V
Drain to Source Resistance
1.1 Ω
Drain to Source Voltage (Vdss)
-30 V
Dual Supply Voltage
-30 V
Element Configuration
Single
Fall Time
4.5 ns
Gate to Source Voltage (Vgs)
8 V
Input Capacitance
110 pF
Max Dual Supply Voltage
-30 V
Max Operating Temperature
150 °C
Max Power Dissipation
500 mW
Min Breakdown Voltage
30 V
Min Operating Temperature
-55 °C
Nominal Vgs
-680 mV
Number of Elements
1
Packaging
Tape & Reel
Power Dissipation
417 mW
Rds On Max
900 mΩ
Resistance
900 mΩ
Rise Time
4.5 ns
Termination
SMD/SMT
Threshold Voltage
-680 mV
Turn-Off Delay Time
45 ns
Turn-On Delay Time
2 ns
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