BSH103,215
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BSH103,215
Datenblatt
Beschreibung
BSH103 Series 30 V 850 mA 400 mOhm N-Ch Enhancement Mode MOS Transistor - SOT-23
Technische Daten: BSH103,215
China RoHS
Compliant
Lead Free
Lead Free
Radiation Hardening
No
REACH SVHC
Yes
RoHS
Compliant
Height
1 mm
Length
3 mm
Width
1.4 mm
Case/Package
SOT
Contact Plating
Tin
Number of Pins
3
Number of Terminals
3
Weight
4.535924 g
Country of Origin
Mainland China
Export Control Classification Number (ECCN) Code
EAR99
Introduction Date
1997-06-20
Lifecycle Status
Production (Last Updated: 2 years ago)
Manufacturer Lifecycle Status
RELEASED FOR SUPPLY (Last Updated: 2 years ago)
Continuous Drain Current (ID)
850 mA
Drain to Source Breakdown Voltage
30 V
Drain to Source Resistance
500 mΩ
Drain to Source Voltage (Vdss)
30 V
Dual Supply Voltage
30 V
Element Configuration
Single
Fall Time
3.5 ns
Gate to Source Voltage (Vgs)
8 V
Input Capacitance
83 pF
Max Dual Supply Voltage
30 V
Max Operating Temperature
150 °C
Max Power Dissipation
750 mW
Min Breakdown Voltage
30 V
Min Operating Temperature
-55 °C
Nominal Vgs
400 mV
Number of Elements
1
Packaging
Tape & Reel
Power Dissipation
750 mW
Rds On Max
400 mΩ
Resistance
500 mΩ
Rise Time
3.5 ns
Termination
SMD/SMT
Threshold Voltage
400 mV
Turn-Off Delay Time
20 ns
Turn-On Delay Time
2.5 ns
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