2N7002PW,115
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Nexperia
Mpn
2N7002PW,115
Datenblatt
Beschreibung
2N7002PW Series N-Channel 60 V 1.6 Ohm 260 mW 0.8 nC SMT TrenchMOS FET - SOT-323
Technische Daten: 2N7002PW,115
Lead Free
Lead Free
Radiation Hardening
No
REACH SVHC
Yes
RoHS
Compliant
Height
1.1 mm
Case/Package
SOT
Contact Plating
Tin
Number of Pins
3
Number of Terminals
3
Lifecycle Status
Production (Last Updated: 1 year ago)
Manufacturer Lifecycle Status
RELEASED FOR SUPPLY (Last Updated: 1 year ago)
Ambient Temperature Range High
150 °C
Continuous Drain Current (ID)
310 mA
Drain to Source Breakdown Voltage
60 V
Drain to Source Resistance
1.6 Ω
Drain to Source Voltage (Vdss)
60 V
Element Configuration
Single
Fall Time
4 ns
Gate to Source Voltage (Vgs)
20 V
Input Capacitance
50 pF
Max Dual Supply Voltage
60 V
Max Junction Temperature (Tj)
150 °C
Max Operating Temperature
150 °C
Max Power Dissipation
830 mW
Min Breakdown Voltage
60 V
Min Operating Temperature
-55 °C
Number of Channels
1
Number of Elements
1
Packaging
Tape & Reel
Power Dissipation
260 mW
Rds On Max
1.6 Ω
Resistance
1.6 Ω
Rise Time
4 ns
Turn-Off Delay Time
10 ns
Turn-On Delay Time
3 ns
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