PMEG2010BEA,115
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NXP Semiconductors
Mpn
PMEG2010BEA,115
Beschreibung
Diode Schottky 20V 1A
Technische Daten: PMEG2010BEA,115
China RoHS
Compliant
Lead Free
Lead Free
Radiation Hardening
No
REACH SVHC
Yes
RoHS
Compliant
Height
6.35 mm
Length
6.35 mm
Width
6.35 mm
Contact Plating
Tin
Mount
Surface Mount
Number of Pins
2
Number of Terminals
2
Weight
4.535924 g
Export Control Classification Number (ECCN) Code
EAR99
Harmonized Tariff Schedule (HTS) Code
8541.10.00.50
Introduction Date
2004-06-15
Lifecycle Status
Production (Last Updated: 2 years ago)
Manufacturer Lifecycle Status
RELEASED FOR SUPPLY (Last Updated: 2 years ago)
Average Rectified Current
1 A
Element Configuration
Single
Forward Current
1 A
Forward Voltage
130 mV
Max Forward Surge Current (Ifsm)
10 A
Max Operating Temperature
150 °C
Max Output Current
1 A
Max Repetitive Reverse Voltage (Vrrm)
20 V
Max Reverse Leakage Current
200 µA
Max Reverse Voltage (DC)
20 V
Max Surge Current
10 A
Min Operating Temperature
-65 °C
Number of Elements
1
Packaging
Digi-Reel®
Peak Non-Repetitive Surge Current
10 A
Peak Reverse Current
200 µA
Reverse Standoff Voltage
20 V
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