PMEG2010BEA,115
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NXP Semiconductors
Mpn
PMEG2010BEA,115
Beschreibung
Diode Schottky 20V 1A
Technische Daten: PMEG2010BEA,115
Radiation Hardening
No
RoHS
Compliant
REACH SVHC
Yes
China RoHS
Compliant
Lead Free
Lead Free
Width
6.35 mm
Height
6.35 mm
Length
6.35 mm
Contact Plating
Tin
Number of Pins
2
Number of Terminals
2
Mount
Surface Mount
Weight
4.535924 g
Export Control Classification Number (ECCN) Code
EAR99
Introduction Date
2004-06-15
Manufacturer Lifecycle Status
RELEASED FOR SUPPLY (Last Updated: 2 years ago)
Harmonized Tariff Schedule (HTS) Code
8541.10.00.50
Lifecycle Status
Production (Last Updated: 2 years ago)
Max Output Current
1 A
Max Reverse Voltage (DC)
20 V
Element Configuration
Single
Max Reverse Leakage Current
200 µA
Max Surge Current
10 A
Min Operating Temperature
-65 °C
Number of Elements
1
Average Rectified Current
1 A
Max Forward Surge Current (Ifsm)
10 A
Max Operating Temperature
150 °C
Packaging
Digi-Reel®
Peak Non-Repetitive Surge Current
10 A
Peak Reverse Current
200 µA
Forward Current
1 A
Forward Voltage
130 mV
Max Repetitive Reverse Voltage (Vrrm)
20 V
Reverse Standoff Voltage
20 V
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