PESD12VS1UB,115
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3 000
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Standort
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NXP Semiconductors
Mpn
PESD12VS1UB,115
Beschreibung
TVS DIODE 12VWM 35VC SOD523
Technische Daten: PESD12VS1UB,115
China RoHS
Compliant
Lead Free
Lead Free
Radiation Hardening
No
Ratings
AEC-Q101
REACH SVHC
Yes
RoHS
Compliant
Depth
850 µm
Height
650 µm
Length
1.25 mm
Width
850 µm
Contact Plating
Tin
Mount
Surface Mount
Number of Pins
2
Number of Terminals
2
Weight
4.535924 g
Export Control Classification Number (ECCN) Code
EAR99
Harmonized Tariff Schedule (HTS) Code
8541.10.00.50
Introduction Date
2009-09-03
Lifecycle Status
Production (Last Updated: 2 years ago)
Manufacturer Lifecycle Status
RELEASED FOR SUPPLY (Last Updated: 2 years ago)
Breakdown Voltage
15 V
Capacitance
75 pF
Clamping Voltage
35 V
Composition
Zener
Direction
Unidirectional
Element Configuration
Single
ESD Protection
Yes
Leakage Current
50 nA
Max Breakdown Voltage
15.3 V
Max Operating Temperature
150 °C
Max Reverse Leakage Current
50 nA
Max Surge Current
5 A
Min Breakdown Voltage
14.7 V
Min Operating Temperature
-65 °C
Number of Channels
1
Number of Elements
1
Number of Unidirectional Channels
1
Operating Supply Voltage
12 V
Packaging
Cut Tape
Peak Pulse Current
5 A
Peak Pulse Power
180 W
Peak Reverse Current
50 nA
Polarity
Unidirectional
Power Line Protection
No
Reverse Standoff Voltage
12 V
Termination
SMD/SMT
Test Current
5 mA
Working Voltage
12 V
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