BSN20,215
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Standort
AT
Marke
NXP Semiconductors
Mpn
BSN20,215
Datenblatt
Beschreibung
Trans MOSFET N-CH 50V
Technische Daten: BSN20,215
China RoHS
Compliant
Lead Free
Lead Free
Radiation Hardening
No
REACH SVHC
Unaffected
RoHS
Compliant
Height
1 mm
Length
3 mm
Width
1.4 mm
Case/Package
SOT
Contact Plating
Tin
Mount
Surface Mount
Number of Pins
3
Number of Terminals
3
Weight
4.535924 g
Export Control Classification Number (ECCN) Code
EAR99
Harmonized Tariff Schedule (HTS) Code
8541.21.00.95
Introduction Date
1997-06-18
Lifecycle Status
Obsolete (Last Updated: 8 months ago)
LTB Date
2015-06-30
LTD Date
2015-12-31
Continuous Drain Current (ID)
173 mA
Drain to Source Breakdown Voltage
50 V
Drain to Source Resistance
20 Ω
Drain to Source Voltage (Vdss)
50 V
Dual Supply Voltage
50 V
Element Configuration
Single
Gate to Source Voltage (Vgs)
20 V
Input Capacitance
17 pF
Max Dual Supply Voltage
50 V
Max Operating Temperature
150 °C
Max Power Dissipation
300 mW
Min Breakdown Voltage
50 V
Min Operating Temperature
-65 °C
Nominal Vgs
1 V
Number of Elements
1
Packaging
Tape & Reel
Power Dissipation
830 mW
Rds On Max
15 Ω
Resistance
15 Ω
Termination
SMD/SMT
Threshold Voltage
1 V
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