BSH105,215
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3 000
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fertig zum Versand
Standort
AT
Marke
NXP Semiconductors
Mpn
BSH105,215
Beschreibung
Trans MOSFET N-CH 20V 1.05A
Technische Daten: BSH105,215
China RoHS
Compliant
Lead Free
Lead Free
Radiation Hardening
No
REACH SVHC
Yes
RoHS
Compliant
Height
1 mm
Length
3 mm
Width
1.4 mm
Case/Package
SOT
Contact Plating
Tin
Mount
Surface Mount
Number of Pins
3
Number of Terminals
3
Weight
4.535924 g
Export Control Classification Number (ECCN) Code
EAR99
Harmonized Tariff Schedule (HTS) Code
8541.21.00.95
Introduction Date
1997-06-20
Lifecycle Status
Production (Last Updated: 2 years ago)
Manufacturer Lifecycle Status
RELEASED FOR SUPPLY (Last Updated: 2 years ago)
Continuous Drain Current (ID)
1.05 A
Drain to Source Breakdown Voltage
20 V
Drain to Source Resistance
250 mΩ
Drain to Source Voltage (Vdss)
20 V
Element Configuration
Single
Fall Time
4.5 ns
Gate to Source Voltage (Vgs)
8 V
Input Capacitance
152 pF
Max Dual Supply Voltage
20 V
Max Operating Temperature
150 °C
Max Power Dissipation
417 mW
Min Breakdown Voltage
20 V
Min Operating Temperature
-55 °C
Nominal Vgs
570 mV
Number of Elements
1
Packaging
Tape & Reel
Power Dissipation
417 mW
Rds On Max
200 mΩ
Resistance
200 MΩ
Rise Time
4.5 ns
Threshold Voltage
570 mV
Turn-Off Delay Time
45 ns
Turn-On Delay Time
2 ns
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