BC857BS,115
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NXP Semiconductors
Mpn
BC857BS,115
Datenblatt
Beschreibung
Transistor GP BJT PNP 45V 0.1A Automotive 6-Pin TSSOP T/R
Technische Daten: BC857BS,115
China RoHS
Compliant
Lead Free
Lead Free
Radiation Hardening
No
REACH SVHC
Yes
RoHS
Compliant
Height
1 mm
Length
2.2 mm
Width
1.35 mm
Case/Package
SOT-363
Contact Plating
Tin
Mount
Surface Mount
Number of Pins
6
Number of Terminals
6
Weight
4.535924 g
Country of Origin
Malaysia
Export Control Classification Number (ECCN) Code
EAR99
Introduction Date
1997-09-01
Lifecycle Status
Production (Last Updated: 2 years ago)
Manufacturer Lifecycle Status
RELEASED FOR SUPPLY (Last Updated: 2 years ago)
Collector Base Voltage (VCBO)
50 V
Collector Emitter Breakdown Voltage
-45 V
Collector Emitter Saturation Voltage
400 mV
Collector Emitter Voltage (VCEO)
45 V
Element Configuration
Dual
Emitter Base Voltage (VEBO)
5 V
Frequency
100 MHz
Gain Bandwidth Product
100 MHz
hFE Min
200
Max Breakdown Voltage
45 V
Max Collector Current
100 mA
Max Frequency
100 MHz
Max Operating Temperature
150 °C
Max Power Dissipation
200 mW
Min Operating Temperature
-65 °C
Number of Elements
2
Packaging
Cut Tape
Polarity
PNP
Power Dissipation
300 mW
Transition Frequency
100 MHz
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