BAS85,115
Verfügbare Menge
2 500
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fertig zum Versand
Standort
AT
Marke
NXP Semiconductors
Mpn
BAS85,115
Beschreibung
Diode Schottky 0.2A 2-Pin Mini-MELF T/R
Technische Daten: BAS85,115
China RoHS
Non-Compliant
Lead Free
Lead Free
Radiation Hardening
No
REACH SVHC
Unaffected
RoHS
Compliant
Height
1.6 mm
Length
3.7 mm
Width
1.6 mm
Body Material
Glass
Contact Plating
Tin
Mount
Surface Mount
Number of Pins
2
Number of Terminals
2
Weight
4.535924 g
Country of Origin
Mainland China
Export Control Classification Number (ECCN) Code
EAR99
Harmonized Tariff Schedule (HTS) Code
8541.10.00.70
Introduction Date
1991-04-01
Lifecycle Status
EOL (Last Updated: 2 years ago)
Manufacturer Lifecycle Status
DISCONTINUATION OF DELIVERY (Last Updated: 2 years ago)
Ambient Temperature Range High
125 °C
Average Rectified Current
200 mA
Capacitance
10 pF
Current
2 A
Element Configuration
Single
Forward Current
200 mA
Forward Voltage
800 mV
Max Forward Surge Current (Ifsm)
5 A
Max Junction Temperature (Tj)
125 °C
Max Operating Temperature
125 °C
Max Output Current
200 mA
Max Repetitive Reverse Voltage (Vrrm)
30 V
Max Reverse Leakage Current
2.3 µA
Max Reverse Voltage (DC)
30 V
Max Surge Current
5 A
Min Operating Temperature
-65 °C
Number of Elements
1
Peak Non-Repetitive Surge Current
5 A
Peak Reverse Current
2 µA
Reverse Recovery Time
4 ns
Reverse Standoff Voltage
25 V
Reverse Voltage
30 V
Termination
SMD/SMT
Voltage
30 V
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