DN3545N8-G
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29 950
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Microchip
Mpn
DN3545N8-G
Beschreibung
MOSFET N-CH 450V 200MA TO243AA
Technische Daten: DN3545N8-G
Lead Free
Lead Free
Radiation Hardening
No
REACH SVHC
No
RoHS
Compliant
Height
1.6 mm
Length
4.6 mm
Width
2.6 mm
Case/Package
SOT-89
Contact Plating
Tin
Mount
Surface Mount
Number of Pins
3
Weight
52.786812 mg
Projected EOL Date
2034-12-30
Country of Assembly
China, Taiwan
Country of Fabrication
United States of America
Country of Origin
China, Taiwan
Export Control Classification Number (ECCN) Code
EAR99
Harmonized Tariff Schedule (HTS) Code
8541.29.0095
Lifecycle Status
Production (Last Updated: 4 years ago)
Ambient Temperature Range High
150 °C
Continuous Drain Current (ID)
200 mA
Drain to Source Breakdown Voltage
450 V
Drain to Source Resistance
20 Ω
Drain to Source Voltage (Vdss)
450 V
Element Configuration
Single
Fall Time
30 ns
Gate to Source Voltage (Vgs)
20 V
Input Capacitance
360 pF
Max Operating Temperature
150 °C
Max Power Dissipation
1.6 W
Min Operating Temperature
-55 °C
Number of Channels
1
Number of Elements
1
Packaging
Cut Tape
Power Dissipation
1.6 W
Rds On Max
20 Ω
Rise Time
30 ns
Turn-Off Delay Time
30 ns
Turn-On Delay Time
20 ns
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