IRFR3710ZPBF
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Infineon
Mpn
IRFR3710ZPBF
Datenblatt
Beschreibung
MOSFET, Power; N-Ch; VDSS 100V; RDS(ON) 15Milliohms; ID 56A; D-Pak (TO-252AA); -55deg
Technische Daten: IRFR3710ZPBF
Lead Free
Lead Free
Radiation Hardening
No
REACH SVHC
No
RoHS
Compliant
Height
2.2606 mm
Length
6.1976 mm
Case/Package
DPAK
Contact Plating
Tin
Mount
Surface Mount
Number of Pins
3
Number of Terminals
2
Lifecycle Status
Obsolete (Last Updated: 3 months ago)
Continuous Drain Current (ID)
42 A
Current Rating
42 A
Drain to Source Breakdown Voltage
100 V
Drain to Source Resistance
18 mΩ
Drain to Source Voltage (Vdss)
100 V
Dual Supply Voltage
100 V
Element Configuration
Single
Fall Time
42 ns
Gate to Source Voltage (Vgs)
20 V
Input Capacitance
2.93 nF
Max Junction Temperature (Tj)
175 °C
Max Operating Temperature
150 °C
Max Power Dissipation
140 W
Min Breakdown Voltage
100 V
Min Operating Temperature
-55 °C
Nominal Vgs
4 V
Number of Elements
1
On-State Resistance
18 mΩ
Package Quantity
3000
Power Dissipation
140 W
Rds On Max
18 mΩ
Recovery Time
53 ns
Resistance
18 MΩ
Rise Time
43 ns
Termination
SMD/SMT
Threshold Voltage
4 V
Turn-Off Delay Time
53 ns
Turn-On Delay Time
14 ns
Voltage Rating (DC)
100 V
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