IRF5210STRLPBF
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Infineon
Mpn
IRF5210STRLPBF
Beschreibung
MOSFET P-CH 100V 38A D2PAK
Technische Daten: IRF5210STRLPBF
China RoHS
Non-Compliant
Lead Free
Lead Free
Radiation Hardening
No
REACH SVHC
No
RoHS
Compliant
Height
4.826 mm
Width
9.65 mm
Length
10.668 mm
Contact Plating
Tin
Mount
Surface Mount
Number of Pins
3
Case/Package
D2PAK
Number of Terminals
2
Introduction Date
1996-08-14
Country of Origin
Mainland China
Lifecycle Status
Production (Last Updated: 4 months ago)
Export Control Classification Number (ECCN) Code
EAR99
Gate to Source Voltage (Vgs)
20 V
Nominal Vgs
4 V
Fall Time
55 ns
Input Capacitance
2.78 nF
Min Breakdown Voltage
100 V
Min Operating Temperature
-55 °C
Package Quantity
800
Threshold Voltage
-4 V
Turn-Off Delay Time
72 ns
Drain to Source Resistance
60 mΩ
Drain to Source Voltage (Vdss)
-100 V
Element Configuration
Single
Packaging
Cut Tape
Termination
SMD/SMT
Turn-On Delay Time
14 ns
Continuous Drain Current (ID)
38 A
Drain to Source Breakdown Voltage
-100 V
Dual Supply Voltage
100 V
Max Junction Temperature (Tj)
150 °C
Max Operating Temperature
150 °C
Max Power Dissipation
170 W
Number of Elements
1
On-State Resistance
60 mΩ
Power Dissipation
3.1 W
Rds On Max
60 mΩ
Resistance
60 mΩ
Rise Time
63 ns
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