IRF5210STRLPBF
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Infineon
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IRF5210STRLPBF
Beschreibung
MOSFET P-CH 100V 38A D2PAK
Technische Daten: IRF5210STRLPBF
China RoHS
Non-Compliant
Lead Free
Lead Free
Radiation Hardening
No
REACH SVHC
No
RoHS
Compliant
Height
4.826 mm
Length
10.668 mm
Width
9.65 mm
Case/Package
D2PAK
Contact Plating
Tin
Mount
Surface Mount
Number of Pins
3
Number of Terminals
2
Country of Origin
Mainland China
Export Control Classification Number (ECCN) Code
EAR99
Introduction Date
1996-08-14
Lifecycle Status
Production (Last Updated: 4 months ago)
Continuous Drain Current (ID)
38 A
Drain to Source Breakdown Voltage
-100 V
Drain to Source Resistance
60 mΩ
Drain to Source Voltage (Vdss)
-100 V
Dual Supply Voltage
100 V
Element Configuration
Single
Fall Time
55 ns
Gate to Source Voltage (Vgs)
20 V
Input Capacitance
2.78 nF
Max Junction Temperature (Tj)
150 °C
Max Operating Temperature
150 °C
Max Power Dissipation
170 W
Min Breakdown Voltage
100 V
Min Operating Temperature
-55 °C
Nominal Vgs
4 V
Number of Elements
1
On-State Resistance
60 mΩ
Package Quantity
800
Packaging
Cut Tape
Power Dissipation
3.1 W
Rds On Max
60 mΩ
Resistance
60 mΩ
Rise Time
63 ns
Termination
SMD/SMT
Threshold Voltage
-4 V
Turn-Off Delay Time
72 ns
Turn-On Delay Time
14 ns
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