IPD50N03S4L06ATMA1
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2 181
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Standort
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Marke
Infineon
Mpn
IPD50N03S4L06ATMA1
Beschreibung
MOSFET N-CH 30V 50A TO252-31
Technische Daten: IPD50N03S4L06ATMA1
China RoHS
Non-Compliant
Halogen Free
Halogen Free
Lead Free
Contains Lead
Ratings
AEC-Q101
REACH SVHC
No
RoHS
Compliant
Height
2.5 mm
Case/Package
DPAK
Mount
Surface Mount
Number of Pins
3
Number of Terminals
2
Country of Origin
Austria, Malaysia
Export Control Classification Number (ECCN) Code
EAR99
Introduction Date
2008-08-05
Lifecycle Status
Production (Last Updated: 2 months ago)
Continuous Drain Current (ID)
50 A
Drain to Source Breakdown Voltage
30 V
Drain to Source Resistance
5.5 mΩ
Drain to Source Voltage (Vdss)
30 V
Fall Time
7 ns
Gate to Source Voltage (Vgs)
16 V
Input Capacitance
2.33 nF
Max Dual Supply Voltage
30 V
Max Junction Temperature (Tj)
175 °C
Max Operating Temperature
175 °C
Max Power Dissipation
56 W
Min Breakdown Voltage
30 V
Min Operating Temperature
-55 °C
Number of Channels
1
Number of Elements
1
On-State Resistance
5.5 mΩ
Package Quantity
2500
Packaging
Tape & Reel
Power Dissipation
56 W
Rds On Max
5.5 mΩ
Rise Time
1 ns
Turn-Off Delay Time
19 ns
Turn-On Delay Time
3 ns
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