BSS84PH6433XTMA1
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Infineon
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BSS84PH6433XTMA1
Beschreibung
Trans MOSFET P-CH 60V 0.17A Automotive 3-Pin
Technische Daten: BSS84PH6433XTMA1
China RoHS
Compliant
Radiation Hardening
No
Ratings
AEC-Q101
REACH SVHC
Yes
RoHS
Compliant
Height
1.1 mm
Length
2.9 mm
Width
1.3 mm
Case/Package
SOT-23-3
Contact Plating
Tin
Mount
Surface Mount
Number of Pins
3
Number of Terminals
3
Country of Origin
Austria, Mainland China
Export Control Classification Number (ECCN) Code
EAR99
Harmonized Tariff Schedule (HTS) Code
8541.21.00.95
Introduction Date
2012-04-18
Lifecycle Status
Obsolete (Last Updated: 3 months ago)
LTB Date
2024-04-30
LTD Date
2024-10-31
Continuous Drain Current (ID)
170 mA
Drain to Source Breakdown Voltage
-60 V
Drain to Source Resistance
8 Ω
Drain to Source Voltage (Vdss)
-60 V
Element Configuration
Single
Fall Time
20.5 ns
Gate to Source Voltage (Vgs)
20 V
Input Capacitance
19 pF
Max Junction Temperature (Tj)
150 °C
Max Operating Temperature
150 °C
Max Power Dissipation
360 mW
Min Breakdown Voltage
60 V
Min Operating Temperature
-55 °C
Number of Channels
1
Number of Elements
1
Power Dissipation
360 mW
Rds On Max
8 Ω
Rise Time
16.2 ns
Turn-Off Delay Time
8.6 ns
Turn-On Delay Time
6.7 ns
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