FDN357N
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Fairchild Semiconductor
Mpn
FDN357N
Datenblatt
Beschreibung
N-CHANNEL LOGIC LEVEL ENHANCEMENT MODE FIELD EFFEC
Technische Daten: FDN357N
China RoHS
Compliant
Lead Free
Lead Free
Radiation Hardening
No
REACH SVHC
Yes
RoHS
Compliant
Height
1.12 mm
Length
2.92 mm
Width
3.05 mm
Case/Package
SOT-23
Mount
Surface Mount
Number of Pins
3
Number of Terminals
3
Weight
30 mg
Lifecycle Status
Production (Last Updated: 4 years ago)
Manufacturer Lifecycle Status
ACTIVE (Last Updated: 4 years ago)
Continuous Drain Current (ID)
1.9 A
Current Rating
1.9 A
Drain to Source Breakdown Voltage
30 V
Drain to Source Resistance
60 mΩ
Drain to Source Voltage (Vdss)
30 V
Dual Supply Voltage
30 V
Element Configuration
Single
Fall Time
12 ns
Gate to Source Voltage (Vgs)
20 V
Input Capacitance
235 pF
Max Junction Temperature (Tj)
150 °C
Max Operating Temperature
150 °C
Max Power Dissipation
500 mW
Min Breakdown Voltage
30 V
Min Operating Temperature
-55 °C
Nominal Vgs
1.6 V
Number of Channels
1
Number of Elements
1
Packaging
Cut Tape
Power Dissipation
500 mW
Rds On Max
60 mΩ
Resistance
60 MΩ
Rise Time
12 ns
Termination
SMD/SMT
Threshold Voltage
1.6 V
Turn-Off Delay Time
12 ns
Turn-On Delay Time
5 ns
Voltage Rating (DC)
30 V
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