FDN335N
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Fairchild Semiconductor
Mpn
FDN335N
Datenblatt
Beschreibung
N-Channel PowerTrench™ MOSFET, 2.5V Specified, 20V, 1.7A, 70mΩ
Technische Daten: FDN335N
China RoHS
Compliant
Lead Free
Lead Free
Radiation Hardening
No
REACH SVHC
Yes
RoHS
Compliant
Height
940 µm
Length
2.92 mm
Width
3.05 mm
Case/Package
SOT-23
Contact Plating
Tin
Mount
Surface Mount
Number of Pins
3
Number of Terminals
3
Lifecycle Status
Production (Last Updated: 4 years ago)
Manufacturer Lifecycle Status
ACTIVE (Last Updated: 4 years ago)
Continuous Drain Current (ID)
1.7 A
Current
17 A
Current Rating
1.7 A
Drain to Source Breakdown Voltage
20 V
Drain to Source Resistance
70 mΩ
Drain to Source Voltage (Vdss)
20 V
Dual Supply Voltage
25 V
Element Configuration
Single
Fall Time
8.5 ns
Gate to Source Voltage (Vgs)
8 V
Input Capacitance
310 pF
Max Operating Temperature
150 °C
Max Power Dissipation
500 mW
Manufacturer Package Identifier
CASE 527AG-01
Min Breakdown Voltage
20 V
Min Operating Temperature
-55 °C
Nominal Vgs
800 mV
Number of Elements
1
Packaging
Cut Tape
Power Dissipation
500 mW
Rds On Max
70 mΩ
Resistance
70 MΩ
Rise Time
8.5 ns
Termination
SMD/SMT
Threshold Voltage
900 mV
Turn-Off Delay Time
11 ns
Turn-On Delay Time
5 ns
Voltage
20 V
Voltage Rating (DC)
20 V
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