FDN304P
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6 200
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Fairchild Semiconductor
Mpn
FDN304P
Beschreibung
P-CHANNEL 1.8V SPECIFIED POWERTRENCH MOSFET
Technische Daten: FDN304P
China RoHS
Compliant
Lead Free
Lead Free
Radiation Hardening
No
REACH SVHC
Yes
RoHS
Compliant
Height
1.12 mm
Length
2.92 mm
Width
3.05 mm
Case/Package
SOT-23
Contact Plating
Tin
Mount
Surface Mount
Number of Pins
3
Number of Terminals
3
Weight
30 mg
Lifecycle Status
Production (Last Updated: 4 years ago)
Manufacturer Lifecycle Status
ACTIVE (Last Updated: 4 years ago)
Continuous Drain Current (ID)
2.4 A
Current Rating
-2.4 A
Drain to Source Breakdown Voltage
-20 V
Drain to Source Resistance
52 mΩ
Drain to Source Voltage (Vdss)
-20 V
Dual Supply Voltage
-20 V
Element Configuration
Single
Fall Time
15 ns
Gate to Source Voltage (Vgs)
8 V
Input Capacitance
1.312 nF
Max Junction Temperature (Tj)
150 °C
Max Operating Temperature
150 °C
Max Power Dissipation
500 mW
Min Breakdown Voltage
20 V
Min Operating Temperature
-55 °C
Nominal Vgs
-800 mV
Number of Channels
1
Number of Elements
1
Packaging
Cut Tape
Power Dissipation
460 mW
Rds On Max
52 mΩ
Resistance
52 MΩ
Rise Time
15 ns
Termination
SMD/SMT
Threshold Voltage
-800 mV
Turn-Off Delay Time
40 ns
Turn-On Delay Time
15 ns
Voltage Rating (DC)
-20 V
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