FDG6335N
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Standort
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Marke
Fairchild Semiconductor
Mpn
FDG6335N
Datenblatt
Beschreibung
MOSFET 2N-CH 20V 0.7A SOT-363
Technische Daten: FDG6335N
China RoHS
Compliant
Lead Free
Lead Free
Radiation Hardening
No
REACH SVHC
Yes
RoHS
Compliant
Height
1.1 mm
Length
2 mm
Width
1.25 mm
Case/Package
SC
Contact Plating
Tin
Mount
Surface Mount
Number of Pins
6
Number of Terminals
6
Weight
28 mg
Lifecycle Status
Production (Last Updated: 4 years ago)
Manufacturer Lifecycle Status
ACTIVE (Last Updated: 4 years ago)
Continuous Drain Current (ID)
700 mA
Current Rating
700 mA
Drain to Source Breakdown Voltage
20 V
Drain to Source Resistance
300 mΩ
Drain to Source Voltage (Vdss)
20 V
Element Configuration
Dual
Fall Time
7 ns
Gate to Source Voltage (Vgs)
12 V
Input Capacitance
113 pF
Max Junction Temperature (Tj)
150 °C
Max Operating Temperature
150 °C
Max Power Dissipation
300 mW
Min Breakdown Voltage
20 V
Min Operating Temperature
-55 °C
Number of Channels
2
Number of Elements
2
Power Dissipation
300 mW
Rds On Max
300 mΩ
Resistance
300 MΩ
Rise Time
7 ns
Threshold Voltage
1.1 V
Turn-Off Delay Time
9 ns
Turn-On Delay Time
5 ns
Voltage Rating (DC)
20 V
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