FDG312P
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Fairchild Semiconductor
Mpn
FDG312P
Datenblatt
Beschreibung
P-Channel PowerTrench® MOSFET, 2.5V Specified, -1.2 A, 180 mΩ
Technische Daten: FDG312P
China RoHS
Compliant
Lead Free
Lead Free
Radiation Hardening
No
REACH SVHC
Yes
RoHS
Compliant
Length
2 mm
Height
1.1 mm
Width
1.25 mm
Case/Package
SC
Contact Plating
Tin
Mount
Surface Mount
Number of Pins
6
Number of Terminals
6
Weight
28 mg
Lifecycle Status
Obsolete (Last Updated: 11 months ago)
Manufacturer Lifecycle Status
OBSOLETE (Last Updated: 11 months ago)
Continuous Drain Current (ID)
1.2 A
Current Rating
-1.2 A
Drain to Source Breakdown Voltage
-20 V
Drain to Source Resistance
180 mΩ
Drain to Source Voltage (Vdss)
-20 V
Element Configuration
Single
Fall Time
12 ns
Gate to Source Voltage (Vgs)
8 V
Input Capacitance
330 pF
Max Junction Temperature (Tj)
150 °C
Max Operating Temperature
150 °C
Max Power Dissipation
750 mW
Min Breakdown Voltage
20 V
Min Operating Temperature
-55 °C
Number of Channels
1
Number of Elements
1
Power Dissipation
480 mW
Rds On Max
180 mΩ
Resistance
180 mΩ
Rise Time
12 ns
Threshold Voltage
900 mV
Turn-Off Delay Time
16 ns
Turn-On Delay Time
7 ns
Voltage Rating (DC)
-20 V
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