ZXMS6006DT8TA
Verfügbare Menge
719
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fertig zum Versand
Standort
AT
Marke
Diodes Inc.
Mpn
ZXMS6006DT8TA
Beschreibung
Dual MOSFET, Dual N Channel, 2.8 A, 60 V,
Technische Daten: ZXMS6006DT8TA
China RoHS
Non-Compliant
Radiation Hardening
No
REACH SVHC
No
RoHS
Compliant
Height - Seated (Max)
1.7 mm
Length
6.5 mm
Terminal Pitch
1.53 mm
Width
3.5 mm
Case/Package
SMD/SMT
Mount
Surface Mount
Number of Pins
8
Number of Terminals
8
Lifecycle Status
Production (Last Updated: 2 months ago)
Continuous Drain Current (ID)
2.8 A
Drain to Source Resistance
125 mΩ
Drain to Source Voltage (Vdss)
60 V
Fall Time
15 µs
Fault Protection
Over Temperature, Over Voltage
Gate to Source Voltage (Vgs)
5 V
Interface
On/Off
Max Operating Temperature
125 °C
Max Output Current
13 A
Max Power Dissipation
2.13 W
Max Supply Current
200 µA
Max Supply Voltage
5.5 V
Min Breakdown Voltage
60 V
Min Operating Temperature
-40 °C
Number of Channels
1
Number of Circuits
1
Number of Elements
2
Number of Outputs
2
Operating Supply Voltage
3 V
Output Configuration
Low Side
Output Current per Channel
2.8 A
Packaging
Tape & Reel (TR)
Power Dissipation
2.13 W
Resistance
75 mΩ
Rise Time
18 µs
Threshold Voltage
1 V
Turn-Off Delay Time
34 µs
Turn-On Delay Time
8.6 µs
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