QRE1113GR
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23 441
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QRE1113GR
Datenblatt
Beschreibung
QRE1113 Series 30 V 50 mA Miniature Reflective Object Sensor - SMD-4
Technische Daten: QRE1113GR
China RoHS
Compliant
Lead Free
Lead Free
Radiation Hardening
No
REACH SVHC
Yes
RoHS
Compliant
Height
1.6 mm
Length
3.4 mm
Width
2.9 mm
Case/Package
SMD/SMT
Contact Plating
Tin
Mount
Surface Mount
Number of Pins
4
Weight
78 mg
Lifecycle Status
Production (Last Updated: 4 years ago)
Manufacturer Lifecycle Status
ACTIVE (Last Updated: 4 years ago)
Collector Emitter Breakdown Voltage
30 V
Collector Emitter Saturation Voltage
300 mV
Collector Emitter Voltage (VCEO)
30 V
Current Rating
20 mA
Dark Current
1 nA
Fall Time
20 µs
Forward Current
50 mA
Forward Voltage
1.2 V
Input Current
50 mA
Max Breakdown Voltage
30 V
Max Collector Current
900 µA
Max Operating Temperature
85 °C
Max Output Voltage
30 V
Max Power Dissipation
75 mW
Max Supply Voltage
1.6 V
Min Operating Temperature
-40 °C
Min Supply Voltage
1.2 V
Number of Channels
1
Number of Circuits
1
Number of Elements
1
Operating Supply Voltage
1.7 V
Output Type
Phototransistor
Output Voltage
20 V
Packaging
Cut Tape
Power Dissipation
75 mW
Response Time
20 µs
Reverse Breakdown Voltage
5 V
Reverse Voltage (DC)
5 V
Rise Time
20 µs
Sensing Distance
1 mm
Wavelength
940 nm
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