NDD04N50ZT4G
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onsemi
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NDD04N50ZT4G
Datenblatt
Beschreibung
Tape & Reel (TR) Surface Mount N-Channel Single Mosfet Transistor 3A Tc 3A 61W 10ns
Technische Daten: NDD04N50ZT4G
China RoHS
Non-Compliant
Lead Free
Lead Free
Radiation Hardening
No
REACH SVHC
Affected
RoHS
Compliant
Height
2.38 mm
Length
6.73 mm
Width
6.22 mm
Case/Package
DPAK
Number of Pins
4
Number of Terminals
2
Country of Origin
Vietnam
Export Control Classification Number (ECCN) Code
EAR99
Introduction Date
2010-07-01
Lifecycle Status
Obsolete (Last Updated: 5 years ago)
LTB Date
2017-12-15
LTD Date
2018-03-01
Manufacturer Lifecycle Status
OBSOLETE (Last Updated: 5 years ago)
Continuous Drain Current (ID)
3 A
Drain to Source Breakdown Voltage
500 V
Drain to Source Resistance
2.7 mΩ
Drain to Source Voltage (Vdss)
500 V
Element Configuration
Single
Fall Time
10 ns
Gate to Source Voltage (Vgs)
30 V
Input Capacitance
308 pF
Max Operating Temperature
150 °C
Max Power Dissipation
61 W
Min Breakdown Voltage
500 V
Min Operating Temperature
-55 °C
Number of Elements
1
Packaging
Tape and Reel
Power Dissipation
61 W
Rds On Max
2.7 Ω
Resistance
2.7 Ω
Rise Time
9 ns
Turn-Off Delay Time
16 ns
Turn-On Delay Time
9 ns
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