MMBT2907ALT1G
Verfügbare Menge
24 000
Versand möglich
fertig zum Versand
Standort
AT
Marke
onsemi
Mpn
MMBT2907ALT1G
Datenblatt
Beschreibung
Transistor, Bipolar; Si; PNP; General Purpose; VCEO -60VDC; IC -600mA; PD 225mW; hFE 50
Technische Daten: MMBT2907ALT1G
Radiation Hardening
No
China RoHS
Compliant
RoHS
Compliant
Lead Free
Lead Free
REACH SVHC
Yes
Height
1.11 mm
Width
1.3 mm
Length
2.9 mm
Contact Plating
Tin
Number of Terminals
3
Case/Package
SOT-23
Number of Pins
3
Lifecycle Status
Production (Last Updated: 4 years ago)
Manufacturer Lifecycle Status
ACTIVE (Last Updated: 4 years ago)
Collector Emitter Voltage (VCEO)
60 V
Collector Base Voltage (VCBO)
-60 V
Emitter Base Voltage (VEBO)
-5 V
Min Operating Temperature
-55 °C
Packaging
Tape and Reel
Polarity
PNP
Element Configuration
Single
Max Collector Current
600 mA
Max Power Dissipation
225 mW
Max Frequency
200 MHz
Max Junction Temperature (Tj)
150 °C
Max Operating Temperature
150 °C
Power Dissipation
225 mW
Collector Emitter Breakdown Voltage
-60 V
Collector Emitter Saturation Voltage
-400 mV
Current Rating
-600 mA
Frequency
200 MHz
Gain Bandwidth Product
200 MHz
hFE Min
100
Max Breakdown Voltage
60 V
Number of Elements
1
Transition Frequency
200 MHz
Type
General Purpose
Voltage Rating (DC)
-60 V
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