IRF520NPBF
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13
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fertig zum Versand
Standort
AT
Marke
International Rectifier
Mpn
IRF520NPBF
Datenblatt
Beschreibung
Mosfet, Power; N-ch; Vdss 100V; Rds(on) 0.2 Ohm; Id 9.7A; TO-220AB; Pd 48W; Vgs +/-20V
Technische Daten: IRF520NPBF
China RoHS
Non-Compliant
Lead Free
Contains Lead, Lead Free
Radiation Hardening
No
REACH SVHC
No
RoHS
Compliant
Height
19.1 mm
Lead Pitch
2.54 mm
Length
10.5156 mm
Width
4.69 mm
Case/Package
TO-220AB
Contact Plating
Tin
Mount
Through Hole
Number of Pins
3
Number of Terminals
3
Lifecycle Status
Production (Last Updated: 2 months ago)
Continuous Drain Current (ID)
9.7 A
Current Rating
9.7 A
Drain to Source Breakdown Voltage
100 V
Drain to Source Resistance
200 mΩ
Drain to Source Voltage (Vdss)
100 V
Dual Supply Voltage
100 V
Element Configuration
Single
Fall Time
23 ns
Gate to Source Voltage (Vgs)
20 V
Input Capacitance
330 pF
Max Junction Temperature (Tj)
175 °C
Max Operating Temperature
175 °C
Max Power Dissipation
47 W
Min Breakdown Voltage
100 V
Min Operating Temperature
-55 °C
Nominal Vgs
4 V
Number of Channels
1
Number of Elements
1
On-State Resistance
200 mΩ
Package Quantity
1000
Packaging
Bulk
Power Dissipation
48 W
Rds On Max
200 mΩ
Recovery Time
150 ns
Rise Time
23 ns
Threshold Voltage
4 V
Turn-Off Delay Time
32 ns
Turn-On Delay Time
4.5 ns
Voltage Rating (DC)
100 V
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