MMBT4401LT1G
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Fairchild Semiconductor
Mpn
MMBT4401LT1G
Datenblatt
Beschreibung
Bipolar (BJT) Transistor NPN 40 V 600 mA 250MHz 300 mW Surface Mount SOT-23-3 (TO-236)
Technische Daten: MMBT4401LT1G
China RoHS
Compliant
Lead Free
Lead Free
Radiation Hardening
No
REACH SVHC
Yes
RoHS
Compliant
Height
1.11 mm
Length
2.9 mm
Width
1.3 mm
Case/Package
SOT-23
Contact Plating
Tin
Number of Pins
3
Number of Terminals
3
Weight
4.535924 g
Lifecycle Status
Production (Last Updated: 4 years ago)
Manufacturer Lifecycle Status
ACTIVE (Last Updated: 4 years ago)
Collector Base Voltage (VCBO)
60 V
Collector Emitter Breakdown Voltage
40 V
Collector Emitter Saturation Voltage
750 mV
Collector Emitter Voltage (VCEO)
40 V
Current Rating
600 mA
Element Configuration
Single
Emitter Base Voltage (VEBO)
6 V
Frequency
250 MHz
Gain Bandwidth Product
250 MHz
hFE Min
40
Max Breakdown Voltage
40 V
Max Collector Current
600 mA
Max Frequency
250 MHz
Max Junction Temperature (Tj)
150 °C
Max Operating Temperature
150 °C
Max Power Dissipation
300 mW
Min Operating Temperature
-55 °C
Number of Elements
1
Packaging
Tape and Reel
Polarity
NPN
Power Dissipation
225 mW
Transition Frequency
250 MHz
Voltage Rating (DC)
40 V
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